Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
- Huang, Tongde
- Axelsson, Olle
- Malmros, Anna
- Bergsten, Johan
- Gustafsson, Sebastian
- Thorsell, Mattias
- Rorsman, Niklas
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump
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