The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. The increasing complexity of wireless systems, however, directly translates into a need for more detailed characterization using advanced measurement setups. Furthermore, new semiconductor material technologies such as gallium nitride (GaN) are utilized to enable higher performance in microwave circuits. As GaN-based devices tend to suffer from slow and fast dispersion phenomena, relevant wideband characterization is needed.The main focus of...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measu...
The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
Measurements play a key role in the development of microwave hardware as they allow engineers to tes...
There is an increasing need for more accurate models taking into account the nonlinearities and memo...
The rapid growth of mobile telecommunications has fueled the development of the fifth generation (5G...
International audienceThis paper describes a novel fully calibrated four channel broadband time-doma...
International audienceThis paper describes a novel fully calibrated four channel broadband time-doma...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measu...
The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
Measurements play a key role in the development of microwave hardware as they allow engineers to tes...
There is an increasing need for more accurate models taking into account the nonlinearities and memo...
The rapid growth of mobile telecommunications has fueled the development of the fifth generation (5G...
International audienceThis paper describes a novel fully calibrated four channel broadband time-doma...
International audienceThis paper describes a novel fully calibrated four channel broadband time-doma...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measu...