Add to ORKGTwo inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed. The PAs use a LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1 GHz PA achieved a drain efficiency of 77.8 % with 12.4 W of output power and the 1.8 GHz PA a drain efficiency of 60 % with 13 W of output power. To our knowledge these results represent the highest efficiency and output power for an inverse Class F PA based on a single LDMOS transistor working at these frequencies
This paper describes a bulk silicon LDMOS technology, which is compatible with CMOS, lateral BJT, an...
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented...
We present a 15-W, I-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE)...
Two inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed...
This paper describes a highly efficient class-E power amplifier. The design has been carried out at ...
A 10-W LDMOS harmonically tuned power amplifier at 1 GHz with state-of-the-art power-added efficienc...
with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base ...
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has bee...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
This paper demonstrates that by robust waveform engineering it is possible for high power Si LDMOS t...
This paper compares two popular high power, high efficiency modes of operation, class F and inverse ...
In mobile communication new applications like wireless internet and mobile video have increased the ...
In this contribution, the design and the experimental results of a power amplifier in LDMOS technolo...
Abstract—This paper describes a power amplifier, employing parallel-connected laterally diffused met...
This paper compares two popular high power, high efficiency modes of operation, class F and inverse ...
This paper describes a bulk silicon LDMOS technology, which is compatible with CMOS, lateral BJT, an...
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented...
We present a 15-W, I-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE)...
Two inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed...
This paper describes a highly efficient class-E power amplifier. The design has been carried out at ...
A 10-W LDMOS harmonically tuned power amplifier at 1 GHz with state-of-the-art power-added efficienc...
with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base ...
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has bee...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
This paper demonstrates that by robust waveform engineering it is possible for high power Si LDMOS t...
This paper compares two popular high power, high efficiency modes of operation, class F and inverse ...
In mobile communication new applications like wireless internet and mobile video have increased the ...
In this contribution, the design and the experimental results of a power amplifier in LDMOS technolo...
Abstract—This paper describes a power amplifier, employing parallel-connected laterally diffused met...
This paper compares two popular high power, high efficiency modes of operation, class F and inverse ...
This paper describes a bulk silicon LDMOS technology, which is compatible with CMOS, lateral BJT, an...
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented...
We present a 15-W, I-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE)...