Add to ORKGMeasurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltag
A capacitance-spectroscopy technique based on accurate phase detection has been developed to measure...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined a...
An overview is given on measurement techniques and results obtained for the characterization of bond...
Low-temperature bonded Si/Si interfaces have been investigated by performing current and capacitance...
The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by dir...
Dielectric-silicon interfaces are becoming ever more important to device performance. Charge inside ...
The bonding energy of low-temperature plasma bonded silicon-silicon interfaces is correlated with th...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
In this paper we present the results of a forward-biased capacitance measurement on palladium silico...
The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting f...
It is found that Si/Si and Si/SiO<sub>2</sub> interfaces exhibit different interface charge properti...
We review the theoretical studies on the reactive interfaces between silicon and transition metals. ...
This thesis comprises seven papers (A-G) and an extended introduction which puts them into context w...
The energy distribution of interface states for Si-based metal-oxide-semiconductor (MOS) devices wit...
A capacitance-spectroscopy technique based on accurate phase detection has been developed to measure...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined a...
An overview is given on measurement techniques and results obtained for the characterization of bond...
Low-temperature bonded Si/Si interfaces have been investigated by performing current and capacitance...
The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by dir...
Dielectric-silicon interfaces are becoming ever more important to device performance. Charge inside ...
The bonding energy of low-temperature plasma bonded silicon-silicon interfaces is correlated with th...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
In this paper we present the results of a forward-biased capacitance measurement on palladium silico...
The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting f...
It is found that Si/Si and Si/SiO<sub>2</sub> interfaces exhibit different interface charge properti...
We review the theoretical studies on the reactive interfaces between silicon and transition metals. ...
This thesis comprises seven papers (A-G) and an extended introduction which puts them into context w...
The energy distribution of interface states for Si-based metal-oxide-semiconductor (MOS) devices wit...
A capacitance-spectroscopy technique based on accurate phase detection has been developed to measure...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined a...