Add to ORKGWe report on design and test of state-of-the-art building blocks for a 100 Gb/s demonstrator system: a 165 Gb/s 4:1 multiplexer IC and a 110 Gb/s PRBS generator IC in InP DHBT technology
We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T...
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
InP DHBTs have been characterized and their large signal model has been developed. The devices showe...
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet...
Key components and architecture options are being actively investigated to realize next generation t...
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a m...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This paper presents a 4:1 multiplexer fabricated in InP double heterojunction bipolar transistor (DH...
International audienceWe report on an Indium Phosphide (InP) double heterojunction bipolar transisto...
In this paper we present two ICs fabricated in InP DHBT technology and devoted to 43 Gbit/s and over...
system transmitter and receiver with 4-channel 10 Gb/s interface is presented. InP DHBT IC technolog...
A 1:2 demultiplexer (DEMUX) circuit has been successfully designed and manufactured using high-speed...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) us...
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP ...
We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T...
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
InP DHBTs have been characterized and their large signal model has been developed. The devices showe...
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet...
Key components and architecture options are being actively investigated to realize next generation t...
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a m...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This paper presents a 4:1 multiplexer fabricated in InP double heterojunction bipolar transistor (DH...
International audienceWe report on an Indium Phosphide (InP) double heterojunction bipolar transisto...
In this paper we present two ICs fabricated in InP DHBT technology and devoted to 43 Gbit/s and over...
system transmitter and receiver with 4-channel 10 Gb/s interface is presented. InP DHBT IC technolog...
A 1:2 demultiplexer (DEMUX) circuit has been successfully designed and manufactured using high-speed...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) us...
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP ...
We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T...
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
InP DHBTs have been characterized and their large signal model has been developed. The devices showe...