Add to ORKGThe channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental -1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power
Mixers are key devices for front-end components in any transceiver of a communication system. The pe...
This paper shows how a graphic processing of low-noise HEMT's small signal parameters, allows evalua...
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructu...
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resi...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
This work describes an "on wafer" mixer measurement test set that is close to real single FET mixer ...
A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band...
This paper describes the first subharmonically pumped resistive mixer (SPRM) based on HFETs, operati...
This paper focuses on design of resistive HEMT mixers suited for satellite repeaters where conversio...
This thesis presents theory, device models and circuits related to resistive FET mixers: A wave an...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is descri...
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating ...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
The W-band ranging from 75 to 110 GHz marks a frequency window of low atmospheric absorption with th...
Mixers are key devices for front-end components in any transceiver of a communication system. The pe...
This paper shows how a graphic processing of low-noise HEMT's small signal parameters, allows evalua...
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructu...
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resi...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
This work describes an "on wafer" mixer measurement test set that is close to real single FET mixer ...
A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band...
This paper describes the first subharmonically pumped resistive mixer (SPRM) based on HFETs, operati...
This paper focuses on design of resistive HEMT mixers suited for satellite repeaters where conversio...
This thesis presents theory, device models and circuits related to resistive FET mixers: A wave an...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is descri...
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating ...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
The W-band ranging from 75 to 110 GHz marks a frequency window of low atmospheric absorption with th...
Mixers are key devices for front-end components in any transceiver of a communication system. The pe...
This paper shows how a graphic processing of low-noise HEMT's small signal parameters, allows evalua...
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructu...