Integrated diode technology for THz applications

This paper provides an overview of research on terahertz integrated diodes and circuits carried out at Chalmers, G\uf6teborg, Sweden. We will present progress on integration techniques for HBV multipliers and Schottky diode mixers and multipliers, including epitaxial transfer of III-Vs and heterogeneous integration on silicon. Moreover, we will present progress on THz device modelling and results from S-parameter characterization of on-chip components at terahertz frequencies. Finally, performance of mixer and multiplier demonstrators based on in-house technology will be presented