Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. Thus, GFETs may potentially advance the current upper operation frequency limit of RF electronics. In this thesis, the practical viability of high-frequency GFETs based on large-area graphene from chemical vapour deposition (CVD) is investigated. Device-level GFET model parameters are extracted to identify performance bottlenecks. Passive mixer and power detector terahertz circuits operating above the present active GFET transit time limit are demonstrated. The first device...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
This contribution presents the results of investigations performed on monolayer graphene field effec...
This contribution presents the results of investigations performed on monolayer graphene field effec...
We developed process technologies dedicated to high frequency graphene field-effect transistors (GFE...
Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising ...
Graphene is promising for being used as a channel material in high frequency and low noise field eff...
Graphene is a promising candidate in analog electronics with projected operation frequency well into...
The recent demonstration of the electric field effect in graphene, a two-dimensional carbon lattice,...
In recent years, graphene, a two-dimensional monolayer of carbon atoms, has rapidly attracted great ...
The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemica...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
This contribution presents the results of investigations performed on monolayer graphene field effec...
This contribution presents the results of investigations performed on monolayer graphene field effec...
We developed process technologies dedicated to high frequency graphene field-effect transistors (GFE...
Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising ...
Graphene is promising for being used as a channel material in high frequency and low noise field eff...
Graphene is a promising candidate in analog electronics with projected operation frequency well into...
The recent demonstration of the electric field effect in graphene, a two-dimensional carbon lattice,...
In recent years, graphene, a two-dimensional monolayer of carbon atoms, has rapidly attracted great ...
The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemica...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...