Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates

Thermal analysis of In0.53Ga0.47As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70 – 110 GHz). It is shown that material transfer to substrates with higher thermal conductivity will reduce thermal resistance by 21 % and approximately 50 % for In0.53Ga0.47As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained