A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is described. A minimum conversion loss of 8 dB, including losses in the connectors, filters, substrates etc, is obtained in the frequency range 40-45 GHz. This is the highest frequency of operation reported for this type of mixer
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandw...
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating ...
This thesis deals with the research and development of HFETs and HFET based circuits. One of the mai...
A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band...
Different drain mixer configurations, based on Heterostructure Field Effect Transistors (HFET), work...
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructu...
This paper describes the first subharmonically pumped resistive mixer (SPRM) based on HFETs, operati...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
This thesis presents theory, device models and circuits related to resistive FET mixers: A wave an...
Two ultra wideband millimeterwave single balanced resistive mixers utilizing a Marchand balun for th...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
In recent years, the increasing amount of data transmission, the need for automotiveradars, and stan...
This paper describes the development and fabrication of two 600 GHz resistive sub-harmonic down conv...
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resi...
In the present work, broadband millimeter wave (mmW) receiver and transmitter circuits for wireless ...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandw...
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating ...
This thesis deals with the research and development of HFETs and HFET based circuits. One of the mai...
A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band...
Different drain mixer configurations, based on Heterostructure Field Effect Transistors (HFET), work...
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructu...
This paper describes the first subharmonically pumped resistive mixer (SPRM) based on HFETs, operati...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
This thesis presents theory, device models and circuits related to resistive FET mixers: A wave an...
Two ultra wideband millimeterwave single balanced resistive mixers utilizing a Marchand balun for th...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
In recent years, the increasing amount of data transmission, the need for automotiveradars, and stan...
This paper describes the development and fabrication of two 600 GHz resistive sub-harmonic down conv...
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resi...
In the present work, broadband millimeter wave (mmW) receiver and transmitter circuits for wireless ...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandw...
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating ...
This thesis deals with the research and development of HFETs and HFET based circuits. One of the mai...