An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fabricated. Embedded on a circuit in a multiplier block, the system exhibits state-of-the-art, flange-to-flange efficiency of 21% at 102 GHz. The maximum output power was 32 mW, which could be further increased by scaling and integration of the device
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
International audienceAn output power of 5 mW has been demonstrated at 290 GHz by tripling a primary...
An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fa...
We describe the heterostructure barrier varactor (HBV) diode and its application in frequency multip...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
The Heterostructure Barrier Varactor, HBV, diode is used in frequency multipliers at millimetre and ...
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) fre...
We present a novel fixed tuned heterostructure barrier varactor diode (HBV) tripler. This new multip...
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
International audienceAn output power of 5 mW has been demonstrated at 290 GHz by tripling a primary...
An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fa...
We describe the heterostructure barrier varactor (HBV) diode and its application in frequency multip...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
The Heterostructure Barrier Varactor, HBV, diode is used in frequency multipliers at millimetre and ...
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) fre...
We present a novel fixed tuned heterostructure barrier varactor diode (HBV) tripler. This new multip...
This thesis describes heterostructure barrier varactor (HBV) frequency multipliers for millimetre an...
International audienceFully integrated monolithic circuits incorporating InP-based heterostructure b...
International audienceAn output power of 5 mW has been demonstrated at 290 GHz by tripling a primary...