Add to ORKGAbstract. A general purpose LS model for GaAs, GaN and SiC FET devices was developed and evaluated with DC, S, and Large Signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy
International audienceAlGaN/GaN hetero-structure varactors with various sizes have been fabricated a...
This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD imple...
This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN...
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and L...
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and ...
General questions concerning selection, modeling and use of different FET made from GaAs, SiC, GaN...
The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and ...
The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is st...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT...
The purpose of this study is to present an advanced technique for accurately modeling the behavior o...
International audienceWe propose here a non-linear GaN HEMT model for CAD including a trapping effec...
A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the no...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...
A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model t...
International audienceAlGaN/GaN hetero-structure varactors with various sizes have been fabricated a...
This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD imple...
This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN...
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and L...
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and ...
General questions concerning selection, modeling and use of different FET made from GaAs, SiC, GaN...
The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and ...
The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is st...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT...
The purpose of this study is to present an advanced technique for accurately modeling the behavior o...
International audienceWe propose here a non-linear GaN HEMT model for CAD including a trapping effec...
A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the no...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...
A new empirical nonlinear model of GaN-based electron devices is presented in the paper. The model t...
International audienceAlGaN/GaN hetero-structure varactors with various sizes have been fabricated a...
This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD imple...
This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN...