The analogue modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN) and spurious free dynamic range (SFDR), of single mode, GaAs-based 1.28 μm vertical cavity surface emitting laser (VCSELs) with highly strained InGaAs quantum wells have been investigated. The VCSELs utilise an oxide aperture for current and optical confinement and an inverted surface relief (SR) for suppression of higher order transverse modes. The inverted SR structure also has the advantage of suppressing oxide modes that, otherwise, appear in VCSELs with a large detuning of the cavity resonance with respect to the gain peak, which is needed to extend the emission wavelength. RIN levels compa...
International audienceIn the context of optical interconnection applications, we report on results o...
In the context of optical interconnection applications, we report on results obtained on strained In...
In the context of optical interconnection applications, we report on results obtained on strained In...
The analogue modulation characteristics, including second order harmonic and third order intermodula...
The analogue modulation characteristics, including second order harmonic and third order intermodula...
GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a...
GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
It is shown, by a systematic variation of design parameters, that the use of an inverted surface rel...
It is shown, by a systematic variation of design parameters, that the use of an inverted surface rel...
We address demands and challenges for GaAs-based Vertical-Cavity Surface-Emitting Lasers (VCSEL) in ...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
[[abstract]]© 2007 Institute of Electrical and Electronics Engineers - In this letter, we investigat...
The vertical-cavity surface-emitting laser (VCSEL) is a low cost light source with inherent high spe...
International audienceIn the context of optical interconnection applications, we report on results o...
In the context of optical interconnection applications, we report on results obtained on strained In...
In the context of optical interconnection applications, we report on results obtained on strained In...
The analogue modulation characteristics, including second order harmonic and third order intermodula...
The analogue modulation characteristics, including second order harmonic and third order intermodula...
GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a...
GaAs-based VCSELs emitting near 1.3 μm are realized using highly strained InGaAs quantum wells and a...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
It is shown, by a systematic variation of design parameters, that the use of an inverted surface rel...
It is shown, by a systematic variation of design parameters, that the use of an inverted surface rel...
We address demands and challenges for GaAs-based Vertical-Cavity Surface-Emitting Lasers (VCSEL) in ...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
[[abstract]]© 2007 Institute of Electrical and Electronics Engineers - In this letter, we investigat...
The vertical-cavity surface-emitting laser (VCSEL) is a low cost light source with inherent high spe...
International audienceIn the context of optical interconnection applications, we report on results o...
In the context of optical interconnection applications, we report on results obtained on strained In...
In the context of optical interconnection applications, we report on results obtained on strained In...