This paper presents a millimeter-wave (mmWave)direct quadrature modulator in 0.25μm InP DHBT technology.The modulator operates over the frequency range of 115 GHz to155 GHz and is based on double balanced Gilbert mixer cells.The design is tested with a CW input signal at 1 GHz and 0 dBmLO power and exhibits up to 6 dB conversion gain and morethan 22 dB image rejection ratio. The LO signal is suppressedby more than 27 dB. The chip consumes 78 mW DC power andcan provide up to 3 dBm RF power in saturation. The activechip area is 560μm 7 440μm
A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a ...
This paper presents the design and characterization of a D-band (110–170 GHz) monolithic microwave i...
[[abstract]]Sub-harmonic modulator and demodulator are presented in this paper using 0.13-mum standa...
This paper presents a millimeter-wave (mmWave) direct quadrature modulator in 0.25μm InP DHBT techno...
This paper presents design and characterization of D-band (110-170 GHz) monolithic microwave integra...
A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit i...
[[abstract]]In this paper, low-voltage evolution and high-speed operation mixer design are presented...
A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology....
The design and characterization of an up-converting double balanced Gilbert cell mixer in a 0.5 \ub5...
A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixe...
This paper presents a 110–170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS tec...
This paper presents a 110-170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS tec...
Millimeter waves are finding increasing applications in data communication, sensing,imaging and radi...
In recent years, the increasing amount of data transmission, the need for automotiveradars, and stan...
A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0...
A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a ...
This paper presents the design and characterization of a D-band (110–170 GHz) monolithic microwave i...
[[abstract]]Sub-harmonic modulator and demodulator are presented in this paper using 0.13-mum standa...
This paper presents a millimeter-wave (mmWave) direct quadrature modulator in 0.25μm InP DHBT techno...
This paper presents design and characterization of D-band (110-170 GHz) monolithic microwave integra...
A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit i...
[[abstract]]In this paper, low-voltage evolution and high-speed operation mixer design are presented...
A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology....
The design and characterization of an up-converting double balanced Gilbert cell mixer in a 0.5 \ub5...
A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixe...
This paper presents a 110–170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS tec...
This paper presents a 110-170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS tec...
Millimeter waves are finding increasing applications in data communication, sensing,imaging and radi...
In recent years, the increasing amount of data transmission, the need for automotiveradars, and stan...
A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0...
A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a ...
This paper presents the design and characterization of a D-band (110–170 GHz) monolithic microwave i...
[[abstract]]Sub-harmonic modulator and demodulator are presented in this paper using 0.13-mum standa...