International audienceVarious optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static Discharges (ESD) to create defects. The results obtained by each technique were analyzed to determine the nature of the defects. The different data are compared to assess their sensitivity and to evaluate the contribution of each technique in a failure analysis flo
Electrostatic discharge (ESD) is often the cause of system-level failure or malfunction of embedded ...
Electrostatic discharges (ESD) can lead to soft-errors (e.g., bit-errors, wrong resets etc.) in digi...
Electrical stresses, such as electrostatic discharges (ESD) and electric overstress (EOS), are at th...
International audienceVarious optical defect localization techniques are applied on the same integra...
International audienceThis paper presents an experimental comparison of laser beam based techniques ...
International audienceThis paper presents a study of the well-known Optical Beam Induced Current (OB...
International audienceThis paper deals with the localization of ElectroStatic Discharge (ESD) failur...
Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can...
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide ...
This dissertation, composed of four papers, discusses three topics related to system level electrost...
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide ...
Techniques based on IR emission microscopy and scanning laser microscopy have been applied to the st...
System level Electrostatic Discharges (ESD) can lead to soft-errors (e.g., bit-errors, wrong resets ...
Three methods in semiconductor defect analysis are described with examples and appraisal of their ca...
The work presented here is related to the utilization of .computer aided design (CAD) Navigation too...
Electrostatic discharge (ESD) is often the cause of system-level failure or malfunction of embedded ...
Electrostatic discharges (ESD) can lead to soft-errors (e.g., bit-errors, wrong resets etc.) in digi...
Electrical stresses, such as electrostatic discharges (ESD) and electric overstress (EOS), are at th...
International audienceVarious optical defect localization techniques are applied on the same integra...
International audienceThis paper presents an experimental comparison of laser beam based techniques ...
International audienceThis paper presents a study of the well-known Optical Beam Induced Current (OB...
International audienceThis paper deals with the localization of ElectroStatic Discharge (ESD) failur...
Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can...
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide ...
This dissertation, composed of four papers, discusses three topics related to system level electrost...
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide ...
Techniques based on IR emission microscopy and scanning laser microscopy have been applied to the st...
System level Electrostatic Discharges (ESD) can lead to soft-errors (e.g., bit-errors, wrong resets ...
Three methods in semiconductor defect analysis are described with examples and appraisal of their ca...
The work presented here is related to the utilization of .computer aided design (CAD) Navigation too...
Electrostatic discharge (ESD) is often the cause of system-level failure or malfunction of embedded ...
Electrostatic discharges (ESD) can lead to soft-errors (e.g., bit-errors, wrong resets etc.) in digi...
Electrical stresses, such as electrostatic discharges (ESD) and electric overstress (EOS), are at th...