A 24 GHz, 18 dBm Fully Integrated Power Amplifier in a 0.13μm SiGe HBT Technology

International audienceA 24GHz, +18.0dBm fully-integrated power amplifier (PA) with 50Ω input and output matching is designed in 0.13μm SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8dB with 15.89 dBm output power at 1dB compression and a maximum single-ended output power of +18.0dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3mm² (including pads and matching network