Add to ORKGInternational audienceWe propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with low temperature sensitivity. It is achieved by inserting in the same LDMOS device P+ diffusions in the drain with various N+/P+ ratios whose impact on RON and holding current at high temperatures is thoroughly studied
A novel power-rail ESD clamp circuit with a small time constant to achieve a longer turn-on time is ...
This paper describes the basic principles and experimental results of a compact IGBT gate driver for...
Abstract—A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed...
International audienceWe propose a new MOS-IGBT power clamp for high-temperature operation providing...
International audienceSmart power technologies are required to withstand high ESD robustness, both u...
Abstract: We propose a new MOS-IGB robustness ESD protection with low temp diffusions in the drain w...
International audienceA MOS-IGBT-SCR component that was proposed in a previous paper to increase the...
[[abstract]]In the power management applications, the lateral double-diffusion MOS (LDMOS) transisto...
Within the framework of COTECH FNRAE project, the objectives of our work were the improvement of the...
A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is ...
A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is ...
In this work we present results concerning ESD protection structures for 20 V and 40 V power supply ...
A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDM...
Areas which require high-temperature MOS circuits are instrumentations for geothermal and petroleum ...
In this paper, characteristics of electrostatic discharge (ESD) protection devices operating under E...
A novel power-rail ESD clamp circuit with a small time constant to achieve a longer turn-on time is ...
This paper describes the basic principles and experimental results of a compact IGBT gate driver for...
Abstract—A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed...
International audienceWe propose a new MOS-IGBT power clamp for high-temperature operation providing...
International audienceSmart power technologies are required to withstand high ESD robustness, both u...
Abstract: We propose a new MOS-IGB robustness ESD protection with low temp diffusions in the drain w...
International audienceA MOS-IGBT-SCR component that was proposed in a previous paper to increase the...
[[abstract]]In the power management applications, the lateral double-diffusion MOS (LDMOS) transisto...
Within the framework of COTECH FNRAE project, the objectives of our work were the improvement of the...
A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is ...
A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is ...
In this work we present results concerning ESD protection structures for 20 V and 40 V power supply ...
A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDM...
Areas which require high-temperature MOS circuits are instrumentations for geothermal and petroleum ...
In this paper, characteristics of electrostatic discharge (ESD) protection devices operating under E...
A novel power-rail ESD clamp circuit with a small time constant to achieve a longer turn-on time is ...
This paper describes the basic principles and experimental results of a compact IGBT gate driver for...
Abstract—A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed...