Influence of Gamma Radiation on Some Commercial EPROM and EEPROM Components

This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory ((EPROM)-P-2) components exposed to gamma rays. Results obtained for CMOS-based EPROM (NM27C010) and (EPROM)-P-2 (NM93CS46) components provide evidence that EPROMs have a greater radiation hardness than (EPROMs)-P-2. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in (EPROMs)-P-2 are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.Progress in Electromagnetics Research Symposium, Mar 22-26, 2010, Xian, Peoples R Chin