Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers

We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural and optical characterisations show that InAs QW of at least 8ML can be grown without elastic relaxation in the presence of Sb on surface. Without Sb, critical thicknesses for Stranski-Krastanov transition thinner than 3ML are usually observed[6]. The achievement of thick InAs QWs on AlAsSb is promising to reach 1.55μm ISB transition, and envisages the elaboration of new devices for optical network