The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, h...
Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive ...
Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on convention...
We report on the characterization of bulk and epitaxial ZnO films doped by nitrogen. The ZnO thin fi...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf dio...
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf dio...
To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introdu...
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering...
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering...
Electrical and optical properties of the (N,Ga)-doped ZnO films have been studied. Three growth regi...
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 degrees C ...
Remote plasma in-situ atomic layer doping technique was used to tailor the p-type conductivity of ni...
In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room te...
Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive ...
Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on convention...
We report on the characterization of bulk and epitaxial ZnO films doped by nitrogen. The ZnO thin fi...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode ...
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf dio...
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf dio...
To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introdu...
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering...
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering...
Electrical and optical properties of the (N,Ga)-doped ZnO films have been studied. Three growth regi...
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 degrees C ...
Remote plasma in-situ atomic layer doping technique was used to tailor the p-type conductivity of ni...
In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room te...
Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive ...
Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on convention...
We report on the characterization of bulk and epitaxial ZnO films doped by nitrogen. The ZnO thin fi...