Aluminum nitride (AlN) is a compound with wide technological applications from optics to electronics. At ambient pressure and temperature, AlN has a hexagonal wurtzite type of structure, while the zinc blende (ZnS) type of structure is found in very thin films. At high pressures, a first-order phase transformation from the wurtzite structure to a rock salt type structure has been observed. This study covers the experimentally observed modifications of AlN, investigates their relations and searches for new possible modifications. Therefore, data mining of over 140000 structure candidates has been performed, followed by local optimizations at the ab initio level with Hartree-Fock, LDA, and B3LYP functionals. Finally, twelve structure candidat...
Aluminum nitride (AlN) and boron nitride (BN) are well-known ceramic materials with numerous valuabl...
Numerous experimental studies have shown that the formulation of a quality AlxIn1-xN crystal is unde...
The aim of this work is to investigate intrinsic point defects systematically in the wide band gap s...
Pressure-induced structural phase transformations, electronic and optical properties of AlN are inve...
Aluminum nitride (AlN) is a very important industrial and technological material due to its properti...
AbstractWe report study of high-pressure phases of AlN compound, using a recent version of the full ...
We present first-principles calculations of structural properties of AlN in wurtzite, zinc-blende a...
Phase transformation and stability of cubic aluminium nitride (AlN) phases such as zinc-blende and r...
Ab initio calculations using hybrid B3LYP functional were performed in order to investigate structur...
The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by mea...
Nitrides have attracted great attention due to their outstanding applications as superconductors, hi...
Results of ab initio Hartree—Fock calculations for the electronic structure of aluminum nitride in t...
Novel high pressure metastable phases within Al-In-N system have been comprehensively explored via e...
Electronic properties of aluminum nitride in wurtzite, zinc-blende, and rock-salt phases are investi...
AlN is a wurzite isomorph with a band gap of 6.2 (eV). A technologically important material with app...
Aluminum nitride (AlN) and boron nitride (BN) are well-known ceramic materials with numerous valuabl...
Numerous experimental studies have shown that the formulation of a quality AlxIn1-xN crystal is unde...
The aim of this work is to investigate intrinsic point defects systematically in the wide band gap s...
Pressure-induced structural phase transformations, electronic and optical properties of AlN are inve...
Aluminum nitride (AlN) is a very important industrial and technological material due to its properti...
AbstractWe report study of high-pressure phases of AlN compound, using a recent version of the full ...
We present first-principles calculations of structural properties of AlN in wurtzite, zinc-blende a...
Phase transformation and stability of cubic aluminium nitride (AlN) phases such as zinc-blende and r...
Ab initio calculations using hybrid B3LYP functional were performed in order to investigate structur...
The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by mea...
Nitrides have attracted great attention due to their outstanding applications as superconductors, hi...
Results of ab initio Hartree—Fock calculations for the electronic structure of aluminum nitride in t...
Novel high pressure metastable phases within Al-In-N system have been comprehensively explored via e...
Electronic properties of aluminum nitride in wurtzite, zinc-blende, and rock-salt phases are investi...
AlN is a wurzite isomorph with a band gap of 6.2 (eV). A technologically important material with app...
Aluminum nitride (AlN) and boron nitride (BN) are well-known ceramic materials with numerous valuabl...
Numerous experimental studies have shown that the formulation of a quality AlxIn1-xN crystal is unde...
The aim of this work is to investigate intrinsic point defects systematically in the wide band gap s...