Near-Field Injection At Die Level

International audienceNear-field injection is a promising method in order to induce local faults in integrated circuits. This paper aims at proposing a model of the coupling between the injection probe and the circuit under test. This study relies on measurements performed on a test chip by on-chip voltage sensors. I. INTRODUCTION Near-field injection constitutes a promising method for various applications such as electromagnetic attacks on secured circuits or investigations of integrated circuits (ICs) susceptibility to electromagnetic disturbances [1]. The injection at die level offers the advantage to locate precisely the origin of the faults induced by the coupling of the near-field disturbance. This paper attempts to clarify the nature of the coupling between the injection probe and the circuit under test by the development of a model of the coupling. This study relies on near-field injection measurements performed on a test chip which integrates several on-chip voltage sensors for accurate characterization in high frequency of the voltage induced along circuit interconnects