Add to ORKGInternational audienceIn this work, we investigate the relationship between the surface roughness and antiphase domains in GaP layers grown by MBE on a vicinal Si (001) substrate. The main role of the starting Si surface before III‐V overgrowth is first discussed. Structural properties of antiphase domains (APDs) are investigated at the atomic scale by Scanning Tunneling Microscopy (STM) and Transmission Electron Microscopy (TEM). The correlation between the 3D growth mode and the emerging antiphase boundaries (APBs) is discussed in terms of surface/interface energy, supported by DFT calculations
International audienceWe evidence the influence of the quality of the starting Si surface on the III...
International audienceThe experimental island shapes of III–V islands grown on silicon (001) in the ...
International audienceThe integration of III-V on silicon is still a hot topic as it will open up a ...
International audienceIn this work, we investigate the relationship between the surface roughness an...
International audienceWe present a detailed scanning tunneling microscopy (STM) study of GaP(001) MB...
International audience90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth mode...
International audienceWe have investigated quantitatively anti-phase domains (APD) structural proper...
International audienceHere, we experimentally and theoretically clarify III-V/Si crystal growth proc...
International audienceIn this work, we experimentally and theoretically clarify the III-V/Si crystal...
The Si(0 0 1) surface morphology during ion sputtering at elevated temperatures and solid phase epit...
International audienceThe formation and propagation of anti-phase boundaries (APBs) in the epitaxial...
International audienceWe present a study of the APB annihilation mechanism during the growth of GaSb...
International audienceWe evidence the influence of the quality of the starting Si surface on the III...
International audienceThe experimental island shapes of III–V islands grown on silicon (001) in the ...
International audienceThe integration of III-V on silicon is still a hot topic as it will open up a ...
International audienceIn this work, we investigate the relationship between the surface roughness an...
International audienceWe present a detailed scanning tunneling microscopy (STM) study of GaP(001) MB...
International audience90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth mode...
International audienceWe have investigated quantitatively anti-phase domains (APD) structural proper...
International audienceHere, we experimentally and theoretically clarify III-V/Si crystal growth proc...
International audienceIn this work, we experimentally and theoretically clarify the III-V/Si crystal...
The Si(0 0 1) surface morphology during ion sputtering at elevated temperatures and solid phase epit...
International audienceThe formation and propagation of anti-phase boundaries (APBs) in the epitaxial...
International audienceWe present a study of the APB annihilation mechanism during the growth of GaSb...
International audienceWe evidence the influence of the quality of the starting Si surface on the III...
International audienceThe experimental island shapes of III–V islands grown on silicon (001) in the ...
International audienceThe integration of III-V on silicon is still a hot topic as it will open up a ...