Electronic characterization of a single dangling bond on n- and p-type Si(001)-(2 × 1):H

cited By 1International audienceSingle dangling bonds created on a Si(001):H surface have emerged as the fundamental building block for the construction of atom-scale electronic circuits. A detailed characterization of the electronic properties of a single dangling bond is therefore critical. Combining low-temperature scanning tunneling spectroscopy, imaging, density functional theory and quantum transport calculations, we demonstrate the strong influence of substrate doping, charging and buckling on the electronic properties of a depassivated Si atom