International audienceThis contribution aims to demonstrate the ability of transmission electron microscopy (TEM) and its associated techniques, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS), to contribute to the understanding of the structural, chemical and electronic properties at the nanometre level of rare earth oxide (REO) thin films in the context of their potential use as alternative gate dielectrics to SiO2. A review of the existing work on binary REO and a preliminary work on atomic layer deposited (ALD) Lu2O3/Si stack as-grown and annealed are proposed
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
The ability to grow ultrathin films layer-by-layer with well-defined epitaxial relationships has all...
Novel metal oxide films and new metal gates are currently being developed for future generations of ...
Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spi...
This project primarily focus is on investigating whether the introduction of a passivation layer wou...
The present thesis describes atomic layer deposition (ALD) of ternary rare earth (RE) oxides and cha...
International audienceAberration corrected transmission electron microscopy and electron spectroscop...
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits ...
International audienceThis chapter shows how research on interdiffusion and chemical reactions in th...
International audienceAtomic layer deposition (ALD) has received increasing attention in relation to...
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated c...
LaLuO3 thin films have been deposited with atomic layer deposition on Si substrates using beta-diket...
Ternary oxides (GdSCO3, DyScO3 and LaScO3-in general REScO3 whereas RE stands for rare earth) were s...
Rare-earth oxides (REOx) are extensively investigated due to their extraordinary physical and chemic...
Scanning transmission electron microscopy (STEM) is a powerful tool that continues to advance our un...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
The ability to grow ultrathin films layer-by-layer with well-defined epitaxial relationships has all...
Novel metal oxide films and new metal gates are currently being developed for future generations of ...
Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spi...
This project primarily focus is on investigating whether the introduction of a passivation layer wou...
The present thesis describes atomic layer deposition (ALD) of ternary rare earth (RE) oxides and cha...
International audienceAberration corrected transmission electron microscopy and electron spectroscop...
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits ...
International audienceThis chapter shows how research on interdiffusion and chemical reactions in th...
International audienceAtomic layer deposition (ALD) has received increasing attention in relation to...
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated c...
LaLuO3 thin films have been deposited with atomic layer deposition on Si substrates using beta-diket...
Ternary oxides (GdSCO3, DyScO3 and LaScO3-in general REScO3 whereas RE stands for rare earth) were s...
Rare-earth oxides (REOx) are extensively investigated due to their extraordinary physical and chemic...
Scanning transmission electron microscopy (STEM) is a powerful tool that continues to advance our un...
Rare earth oxides are among the materials which are presently studied as possible replacements of am...
The ability to grow ultrathin films layer-by-layer with well-defined epitaxial relationships has all...
Novel metal oxide films and new metal gates are currently being developed for future generations of ...