Role of the MOCVD deposition conditions on physico-chemical properties of tetragonal ZrO2 thin films

International audienceHigh-k ZrO2 thin films suitable formicroelectronics applications were deposited by DLI-MOCVD methodon planar Si (1 0 0) and pores etched in Si (1 0 0). The effects of various experimental parameters such astemperature of substrates, injection frequency, concentration of the precursor and oxygen partialpressure in the reactive chamber, were investigated in order to produce a single tetragonal ZrO2 phasewhich exhibits, according to the literature, the best permittivity.Taking into account the crystal structure, microstructure and chemistry of the films, the expectedphase was successfully deposited for high temperature of substrates, relatively high feeding rate and lowoxygen partial pressure. Although the 3D coverage is actually not perfect in high aspect ratio pores, theelectric properties of this sample are very promising with permittivity up to 27