International audienceLaser annealing of semiconductor materials is a processing technique offering interesting application features when intense, transient and localized heat sources are needed for electronic device manufacturing or other nano-technological applications. The space-time localization of the induced thermal field (in the nanoseconds/ nanometers scale) promotes interesting non-equilibrium phenomena in the processed material which only recently have been systematically investigated and modelled. In this review paper we discuss the current knowledge on anomalous kinetics occurring in implanted silicon and germanium (i.e. thin layers of disorder diluted alloys of Si and Ge, with variable initial disorder status according to the i...
We report on single-short laser crystallization of Ge/Si multilayer stacks consisting of alternating...
An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribu...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
International audienceLaser annealing of semiconductor materials is a processing technique offering ...
International audienceDefect evolution and dopant activation are intimately related to the use of io...
The influence of the laser annealing on the defect structure of the near-surface layer of silicon c...
The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting ...
cited By 1International audienceThe formation of extended defects and their impact on dopant activat...
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and m...
We present a thermal transport model to describe the melting and resolidification of semiconductors ...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
We report on single-short laser crystallization of Ge/Si multilayer stacks consisting of alternating...
An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribu...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
International audienceLaser annealing of semiconductor materials is a processing technique offering ...
International audienceDefect evolution and dopant activation are intimately related to the use of io...
The influence of the laser annealing on the defect structure of the near-surface layer of silicon c...
The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting ...
cited By 1International audienceThe formation of extended defects and their impact on dopant activat...
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and m...
We present a thermal transport model to describe the melting and resolidification of semiconductors ...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
We report on single-short laser crystallization of Ge/Si multilayer stacks consisting of alternating...
An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribu...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...