We demonstrate a method for the simultaneous fabrication (without the need of expensive e-beam systems) of large arrays of nanodevices working at room temperature. The electrode gap is defined by a selective wet-etching of a AlGaAs/GaAs quantum well structure and controlled with nanometer precision. A selective oxidation of the Al rich barrier reduces the bulk leakage current by six orders of magnitude and extends the applicability of the produced devices to room temperature functionality. As a demonstration, we employ here these nanojunctions to investigate transport in molecular tunnel-junctions based on individual Azurins, a blue copper protein, under ambient conditions. This approach opens the way to the fabrication of complex circuits ...
By using state of the art industrial production methods it is possible to fabricate device geometrie...
In this work, an electrochemical method of fabricating and modifying nanogap electrodes on a silicon...
The transport characteristics of nano—electronic devices are determined not only by the electronic s...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Recent work by a number of groups has highlighted the emerging potential associated with the marriag...
Recent work by a number of groups has highlighted the emerging potential associated with the marriag...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
Electron tunneling between nanospaced electrodes provides a mechanism for directly transducing the p...
In this thesis I present a systematic discussion of large-area tunneling molecular junctions compris...
By using state of the art industrial production methods it is possible to fabricate device geometrie...
In this work, an electrochemical method of fabricating and modifying nanogap electrodes on a silicon...
The transport characteristics of nano—electronic devices are determined not only by the electronic s...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Electronic transport through single molecules has been studied extensively by academic(1-8) and indu...
Recent work by a number of groups has highlighted the emerging potential associated with the marriag...
Recent work by a number of groups has highlighted the emerging potential associated with the marriag...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
We report on the fabrication and single electron tunneling behaviour of large scale arrays of nanoga...
Electron tunneling between nanospaced electrodes provides a mechanism for directly transducing the p...
In this thesis I present a systematic discussion of large-area tunneling molecular junctions compris...
By using state of the art industrial production methods it is possible to fabricate device geometrie...
In this work, an electrochemical method of fabricating and modifying nanogap electrodes on a silicon...
The transport characteristics of nano—electronic devices are determined not only by the electronic s...