The electromigration (EM) of metallic lines is studied in terms of competition between biased processes taking place in a random resistor network. The effects associated with the transport of mass and with the consequent growth of the internal stress are accounted for by stochastic generation and recovery of voids, driven by the external current. Monte Carlo simulations enable us to successfully investigate within a unified theoretical framework a variety of relevant aspects of EM degradation. Here, we present an implementation of the model to rectangular networks. In this manner it is possible to study geometrical effects. An excellent agreement is found between the simulation results and the experimental findings concerning the dependence...
Abstract — Electromigration (EM), a growing problem in on-chip in-terconnects, can cause wire resist...
We have developed a novel physical model and a simulation algorithm capable of predicting electromig...
Modeling of stress and electromigration at the microscopic level, in confined interconnect metallic ...
Electromigration phenomena in metallic lines are studied by using a biased resistor network model. T...
We present a stochastic model which simulates electromigration damage in metallic interconnects by b...
We present a stochastic model which simulates electromigration damage in metallic interconnects by b...
Monte Carlo simulation of polycrystalline metal stripes under electromigration stress have been perf...
We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal s...
We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal s...
Resistance degradation of metallic strips due to electromigation is studied within a percolative app...
Resistance degradation of thin film conductors is studied within a stochastic approach based on a ra...
We have performed the Monte Carlo simulation of electromigration noise in polycrystalline metal stri...
Many macroscopic aspects of electromigration damage in thin metal films have been investigated by me...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Abstract — Electromigration (EM), a growing problem in on-chip in-terconnects, can cause wire resist...
We have developed a novel physical model and a simulation algorithm capable of predicting electromig...
Modeling of stress and electromigration at the microscopic level, in confined interconnect metallic ...
Electromigration phenomena in metallic lines are studied by using a biased resistor network model. T...
We present a stochastic model which simulates electromigration damage in metallic interconnects by b...
We present a stochastic model which simulates electromigration damage in metallic interconnects by b...
Monte Carlo simulation of polycrystalline metal stripes under electromigration stress have been perf...
We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal s...
We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal s...
Resistance degradation of metallic strips due to electromigation is studied within a percolative app...
Resistance degradation of thin film conductors is studied within a stochastic approach based on a ra...
We have performed the Monte Carlo simulation of electromigration noise in polycrystalline metal stri...
Many macroscopic aspects of electromigration damage in thin metal films have been investigated by me...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Abstract — Electromigration (EM), a growing problem in on-chip in-terconnects, can cause wire resist...
We have developed a novel physical model and a simulation algorithm capable of predicting electromig...
Modeling of stress and electromigration at the microscopic level, in confined interconnect metallic ...