Study of C-N Binding States In Carbon Nitride Films Deposited By Reactive XeCl Laser Ablation

Carbon nitride films, deposited on Si substrates at room temperature by XeCl laser ablation of graphite targets in low pressure (1, 5, 10 and 50 Pa) N-2 atmosphere at the fluence of 16 J/cm(2) (similar to 0.5 GW/cm(2)) have been submitted to accurate X-ray photoelectron spectroscopy (XPS) investigations in order to study the C-N chemical bonding in the films. Multiple binding energy values have been obtained. The N 1s peak of the XPS spectra indicates three different binding states of nitrogen atoms to C atoms, while the C 1s peak, apart from the binding states to nitrogen atoms, indicates other bonding states with regard to carbon atoms