In this work, the high frequency response of several types of graphene field-effect transistors (GFET) is analyzed. In the first part, insulating substrates such as sapphire and hexagonal boron nitride are used to optimize device performance. In the second part, few-layer graphene is used as gate material to obtain ultra-thin GFET. Using large area CVD-grown graphene, an array of similar GFETs for improved device comparability and reproducibility is presented in the last part
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
This dissertation discusses various physical aspects of graphene electronic devices, particularly FE...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
Rapid development of wireless and internet communications requires development of new generation hig...
It is an ongoing effort to improve field-effect transistor (FET) performance. With silicon transisto...
Les propriétés électriques et mécaniques exceptionnelles du graphène font de ce matériau bidimension...
Les propriétés électriques et mécaniques exceptionnelles du graphène font de ce matériau bidimension...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
Realization of competitive high frequency graphene field-effect transistors (GFETs) is hindered, in ...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sens...
The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sens...
The ever-growing demand for higher bandwidth broadband communication has driven transistor operation...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
This dissertation discusses various physical aspects of graphene electronic devices, particularly FE...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
Rapid development of wireless and internet communications requires development of new generation hig...
It is an ongoing effort to improve field-effect transistor (FET) performance. With silicon transisto...
Les propriétés électriques et mécaniques exceptionnelles du graphène font de ce matériau bidimension...
Les propriétés électriques et mécaniques exceptionnelles du graphène font de ce matériau bidimension...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is...
Realization of competitive high frequency graphene field-effect transistors (GFETs) is hindered, in ...
Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to it...
The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sens...
The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sens...
The ever-growing demand for higher bandwidth broadband communication has driven transistor operation...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
This dissertation discusses various physical aspects of graphene electronic devices, particularly FE...
With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approach...
DOI
Add to ORKG