Spectral ellipsometry of cobalt-ions implanted silicon surface

Application of a synchrotron microprobe to the analytical characterization of ion-implanted material

von Bohlen, A.
Klockenkämper, R.
Garbe, S.
Gaul, G.
Knöchel, A.
Lechtenberg, F.
Palmetshofer, L.

January 1995

A synchrotron microprobe has been used to characterize ion implantations of nickel and cobalt in sil...

Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

Fried, M.
Lohner, T.
de Nijs, J.M.M.
van Silfhout, A.
Hanekamp, L.J.
Khanh, N.Q.
Laczik, Z.
Gyulai, J.

January 1989

Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017c...

Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

Szekeres, A.
Alexandrova, S.
Petrik, Péter

January 2013

The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implant...

Spectral ellipsometry of cobalt-ions implanted silicon surface

Bazarov V.
Valeev V.
Nuzhdin V.
Osin Y.
Gumarov G.
Stepanov A.

February 2020

Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions

Bazarov V.
Nuzhdin V.
Valeev V.
Vorobev V.
Osin Y.
Stepanov A.

January 2016

Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

U. Müller-Jahreis
P. Thiele
M. Bouafia
A. Seghir

January 1995

Low-energy ion implantations in semiconductor materials cause defects in near surface regions, which...

Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

Lohner, T.
Toth, L.
Fried, M.
Khanh, N.Q.
Yang, Gen Qing
Lu, Lin Chen
Zou, Shichang
Hanekamp, L.J.
van Silfhout, A.
Gyulai, J.

January 1994

The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was inv...

INFRARED ELLIPSOMETRY – A NEW TECHNIQUE FOR CHARACTERIZATION OF DOPANT PARAMETERS IN SILICON

R.R. Schaefer

Un ellipsomètre infrarouge (λ = 10,591 um) est décrit. Ses applications pour caractériser des couche...

Spectroscopic Ellipsometry Studies of Nanocrystalline Silicon in Thin-Film Silicon Dioxide

T. Simpson
Clark W. White
C. Owen Griffiths

August 2015

Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation f...

Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

Lohner, T.
Lohner, T.
Fried, M.
Fried, M.
Gyulai, J.
Vedam, K.
Nguyen, N.V.
Hanekamp, L.J.
Hanekamp, L.J.
van Silfhout, Arend

January 1993

We previously developed a fitting method of several parameters to evaluate ion-implantation-caused d...

Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

Lohner, T.
El-Sherbiny, M.A.
Khánh, N.Q.
Fried, M.
Wormeester, H.
Gyulai, J.
Williams, J.S.
Elliman, R.G.
Ridgway, M.C.

February 1996

The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been exam...

Caractérisation de couches minces nanostructurées par ellipsométrie spectroscopique (application aux propriétés optiques isotropes et anisotropes de nanoparticules sphériques et ovoïdes de cobalt)

GILLIOT, Mickaël, Christophe, Patrick
JOHANN, Luc

January 2006

Des couches minces constituées de nanostructures de cobalt de taille caractéristique de 4 à 110 nano...

Caractérisation de couches minces nanostructurées par ellipsométrie spectroscopique : application aux propriétés optiques isotropes et anisotropes de nanoparticules sphériques et ovoïdes de cobalt

Gilliot, Mickaël, Christophe, Patrick

October 2006

Thin layers containing cobalt nanostructures in the [4-10] nanometers size range, obtained after imp...

Ion-implantation induced anomalous surface amorphization in silicon

Lohner, T.
Kotai, E.
Khanh, N.Q.
Toth, L.
Fried, M.
Vedam, K.
Nguyen, N.V.
Hanekamp, L.J.
van Silfhout, A.

January 1994

Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channelin...

an Ellipsometeric Evaluation of Ion Implanted Silicon

Drennan, Patrick G

January 1991

~ Split Split Plot Design was implemented to investigate the relationship between the ion implantati...

Application of a synchrotron microprobe to the analytical characterization of ion-implanted material

von Bohlen, A.
Klockenkämper, R.
Garbe, S.
Gaul, G.
Knöchel, A.
Lechtenberg, F.
Palmetshofer, L.

January 1995

A synchrotron microprobe has been used to characterize ion implantations of nickel and cobalt in sil...

Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

Fried, M.
Lohner, T.
de Nijs, J.M.M.
van Silfhout, A.
Hanekamp, L.J.
Khanh, N.Q.
Laczik, Z.
Gyulai, J.

January 1989

Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017c...

Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

Szekeres, A.
Alexandrova, S.
Petrik, Péter

January 2013

The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implant...

Spectral ellipsometry of cobalt-ions implanted silicon surface

Bazarov V.
Valeev V.
Nuzhdin V.
Osin Y.
Gumarov G.
Stepanov A.

February 2020

Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions

Bazarov V.
Nuzhdin V.
Valeev V.
Vorobev V.
Osin Y.
Stepanov A.

January 2016

Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

U. Müller-Jahreis
P. Thiele
M. Bouafia
A. Seghir

January 1995

Low-energy ion implantations in semiconductor materials cause defects in near surface regions, which...

Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

Lohner, T.
Toth, L.
Fried, M.
Khanh, N.Q.
Yang, Gen Qing
Lu, Lin Chen
Zou, Shichang
Hanekamp, L.J.
van Silfhout, A.
Gyulai, J.

January 1994

The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was inv...

INFRARED ELLIPSOMETRY – A NEW TECHNIQUE FOR CHARACTERIZATION OF DOPANT PARAMETERS IN SILICON

R.R. Schaefer

Un ellipsomètre infrarouge (λ = 10,591 um) est décrit. Ses applications pour caractériser des couche...

Spectroscopic Ellipsometry Studies of Nanocrystalline Silicon in Thin-Film Silicon Dioxide

T. Simpson
Clark W. White
C. Owen Griffiths

August 2015

Nanocrystalline silicon (n-Si) is formed in a silicon dioxide thin-film matrix by ion implantation f...

Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

Lohner, T.
Lohner, T.
Fried, M.
Fried, M.
Gyulai, J.
Vedam, K.
Nguyen, N.V.
Hanekamp, L.J.
Hanekamp, L.J.
van Silfhout, Arend

January 1993

We previously developed a fitting method of several parameters to evaluate ion-implantation-caused d...

Anomalous surface damage production during high energy implantation analysed by ellipsometry and RBS

Lohner, T.
El-Sherbiny, M.A.
Khánh, N.Q.
Fried, M.
Wormeester, H.
Gyulai, J.
Williams, J.S.
Elliman, R.G.
Ridgway, M.C.

February 1996

The anomalous surface formed in silicon by room temperature Si, Ar and Kr implantation has been exam...

Caractérisation de couches minces nanostructurées par ellipsométrie spectroscopique (application aux propriétés optiques isotropes et anisotropes de nanoparticules sphériques et ovoïdes de cobalt)

GILLIOT, Mickaël, Christophe, Patrick
JOHANN, Luc

January 2006

Des couches minces constituées de nanostructures de cobalt de taille caractéristique de 4 à 110 nano...

Caractérisation de couches minces nanostructurées par ellipsométrie spectroscopique : application aux propriétés optiques isotropes et anisotropes de nanoparticules sphériques et ovoïdes de cobalt

Gilliot, Mickaël, Christophe, Patrick

October 2006

Thin layers containing cobalt nanostructures in the [4-10] nanometers size range, obtained after imp...

Ion-implantation induced anomalous surface amorphization in silicon

Lohner, T.
Kotai, E.
Khanh, N.Q.
Toth, L.
Fried, M.
Vedam, K.
Nguyen, N.V.
Hanekamp, L.J.
van Silfhout, A.

January 1994

Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channelin...

an Ellipsometeric Evaluation of Ion Implanted Silicon

Drennan, Patrick G

January 1991

~ Split Split Plot Design was implemented to investigate the relationship between the ion implantati...

Application of a synchrotron microprobe to the analytical characterization of ion-implanted material

von Bohlen, A.
Klockenkämper, R.
Garbe, S.
Gaul, G.
Knöchel, A.
Lechtenberg, F.
Palmetshofer, L.

January 1995

A synchrotron microprobe has been used to characterize ion implantations of nickel and cobalt in sil...

Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

Fried, M.
Lohner, T.
de Nijs, J.M.M.
van Silfhout, A.
Hanekamp, L.J.
Khanh, N.Q.
Laczik, Z.
Gyulai, J.

January 1989

Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017c...

Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

Szekeres, A.
Alexandrova, S.
Petrik, Péter

January 2013

The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implant...

Spectral ellipsometry of cobalt-ions implanted silicon surface

Abstract

Extracted data

Spectral ellipsometry of cobalt-ions implanted silicon surface

Abstract

Extracted data

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