The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) are presented to show the electron structure of deep level defect color center in AlN single crystals such as a nitrogen vacancy in neutral charge state (VN 0) as well as a new type of point defect such as exchange-coupled pair of the nitrogen vacancies (VN-VN). Analyzing spin density distribution of an unpaired VN 0 electron on different ions of AlN crystalline lattice by means of high frequency ENDOR technique (94 GHz) give us a possibility to calculate hyperfine and quadrupole interactions (QI) with 27Al nuclei spins up to fourth coordinate sphere. Particularly data about quadrupole intera...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiat...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies have bee...
In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spe...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiat...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are prese...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in t...
Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies have bee...
In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spe...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiat...
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the...