金沢大学理学部The observation of a paramagnetic muonium (Mu) spectrum in single-crystalline gallium nitride (GaN) was discussed. It was observed that a paramagnetic muonium center with extremely small hyperfine parameter was formed in GaN below 25 K. The small hyperfine parameter and small ionization energy of the Mu state indicated that muonium in one of its sites produced a shallow state, which raised the possibility that the analogous hydrogen center was a source of n-type conductivity in GaN. It was also observed that the Mu state had a high anisotropic hyperfine structure with axial symmetry along the [0001] direction, which indicated that the state was located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the ...
A comprehensive study of the direct photoluminescence from free-exciton states in GaN using polariza...
The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated ...
Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-t...
Muon spin depolarization measurements in a zero applied magnetic field confirm the existence of a sh...
Molecular‐beam‐epitaxial GaN layers change from strongly conductive (ρ≂10−2 Ω cm at 300 K) to semi‐i...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Molecular-beam-epitaxial (MBE) GaN layers can be made semi-insulating (SI) by using a high N flux du...
Muon spin depolarization measurements performed on powdered InN with zero applied magnetic field rev...
We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydro...
This thesis describes recent fiSH measurements on muonium (Mu=μ⁺e⁻) centers in crystalline Si and G...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV...
A new type of muonium defect centre has been observed in undoped CdS at low temperatures (T<20Â K). ...
The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Eu...
The assignment of muon spin rotation spectra to muonium counterparts of hydrogen shallow-donor state...
A comprehensive study of the direct photoluminescence from free-exciton states in GaN using polariza...
The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated ...
Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-t...
Muon spin depolarization measurements in a zero applied magnetic field confirm the existence of a sh...
Molecular‐beam‐epitaxial GaN layers change from strongly conductive (ρ≂10−2 Ω cm at 300 K) to semi‐i...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Molecular-beam-epitaxial (MBE) GaN layers can be made semi-insulating (SI) by using a high N flux du...
Muon spin depolarization measurements performed on powdered InN with zero applied magnetic field rev...
We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydro...
This thesis describes recent fiSH measurements on muonium (Mu=μ⁺e⁻) centers in crystalline Si and G...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV...
A new type of muonium defect centre has been observed in undoped CdS at low temperatures (T<20Â K). ...
The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Eu...
The assignment of muon spin rotation spectra to muonium counterparts of hydrogen shallow-donor state...
A comprehensive study of the direct photoluminescence from free-exciton states in GaN using polariza...
The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated ...
Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-t...