III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI

金沢大学理工研究域電子情報学系InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized. ©2009 IEEE