Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

3 pages, 3 figures.-- PACS nrs.: 81.05.Cy, 81.07.-b, 68.47.Fg, 81.16.Rf, 79.20.Rf, 68.35.Bs.The temporal evolution of the characteristic wavelength (λ) and ordering range (ξ) of self-organized nanodot patterns induced during Ar+ ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of λ (up to 54–60 nm) and increase in ξ (up to 400–500 nm) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations.This work has been supported by grants BFM2003- 07749-C05-01, BFM2003-07749-C05-02, and BFM2003- 07749-C05-05 from the Spanish Ministerio de Educación y Ciencia (MEC). Two of the authors (R.G. and J.M.-G.) acknowledge financial support from MEC through the “Ramón y Cajal” and FPU programs, respectively.Publicad