We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorption modulator (integrated in silicon photonics) and a fully differential driver designed in a 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, the driver can be dc-coupled to the modulator thus avoiding the use of on-chip or external bias-Ts. At a wavelength of 1560 nm, open eye diagrams for 70 Gb/s after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding to 0.87 pJ/b at 70 Gb/s. Bit-error rate measurements at 50 Gb/s and 56 Gb/s (performed both back to back and with up to 2 km standard single-mode fiber) demonstrate large (0.4 UI at a BER of 10(-12)) h...
Modulation with 7.5dB transmitter penalty is demonstrated from a novel 1.5Vpp differential CMOS driv...
In recent years, optical communication links using pluggable optical transceivers have become widesp...
Two modulator drivers in 0.25 µm SiGe:C BiCMOS, which are integrated each together with a Mach-Zehnd...
We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorptio...
We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co...
A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electric...
High speed optical interconnects require low-power compact electro-optical transmit modules comprisi...
This paper presents a new DC-coupled differential driver for 3D photonic electronic wafer-scale pack...
This paper presents as a novelty a fully monolithically integrated 10 Gb/s silicon modulator consist...
We present an O-band silicon microring modulator with up to 50 Gb/s modulation rates, co-packaged wi...
\u3cp\u3eThis paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) dri...
Artículo científicoWe propose a flexible optical transmitter for shortreach optical interconnects th...
This paper presents a brief study of the two most commonly used topologies - segmented and traveling...
Telecommunications play a crucial role in our daily lives, not only because of their significance in...
Highly integrated electronic driver and receiver ICs with low-power consumption are essential for th...
Modulation with 7.5dB transmitter penalty is demonstrated from a novel 1.5Vpp differential CMOS driv...
In recent years, optical communication links using pluggable optical transceivers have become widesp...
Two modulator drivers in 0.25 µm SiGe:C BiCMOS, which are integrated each together with a Mach-Zehnd...
We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorptio...
We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co...
A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electric...
High speed optical interconnects require low-power compact electro-optical transmit modules comprisi...
This paper presents a new DC-coupled differential driver for 3D photonic electronic wafer-scale pack...
This paper presents as a novelty a fully monolithically integrated 10 Gb/s silicon modulator consist...
We present an O-band silicon microring modulator with up to 50 Gb/s modulation rates, co-packaged wi...
\u3cp\u3eThis paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) dri...
Artículo científicoWe propose a flexible optical transmitter for shortreach optical interconnects th...
This paper presents a brief study of the two most commonly used topologies - segmented and traveling...
Telecommunications play a crucial role in our daily lives, not only because of their significance in...
Highly integrated electronic driver and receiver ICs with low-power consumption are essential for th...
Modulation with 7.5dB transmitter penalty is demonstrated from a novel 1.5Vpp differential CMOS driv...
In recent years, optical communication links using pluggable optical transceivers have become widesp...
Two modulator drivers in 0.25 µm SiGe:C BiCMOS, which are integrated each together with a Mach-Zehnd...