Add to ORKGA parameter extraction procedure for noise models in distributed multiport topology is presented. This model topology is able to describe the small-signal behavior of high electron mobility transistors (HEMTs) even in the sub millimeter-wave regime while providing full model-scalability. The method introduces an efficient way to extract both the active, intrinsic transistor parameters and the noise properties for distributed multiport models. A fully scalable small-signal and noise-model of a 50nm metamorphic HEMT technology in the distributed multiport approach is presented
In this paper a small-signal and noise transistor model with the associated extraction procedure is ...
Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMIC...
A new method for the determination of a distributed FET noise model is presented. It is based on the...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analyt...
Because of their high performance, Metal-Semiconductor Field Effect Transistors (MESFETs) and High-E...
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device ...
This paper presents an analytical approach to determination of the noise wave model parameters fo...
Theoretical thesis.Bibliography: pages 54-57.1 Introduction -- 2 Modelling noise in FETs -- 3 Noise ...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
Electron device modeling is a challenging task at millimeter frequencies. Conventional approaches ba...
A technology-independent, inherently nonlinear approach is proposed for the compact modelling of hig...
A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identificat...
In this paper we utilize a new approach for a small signal model which is scalable from very small t...
In this paper a small-signal and noise transistor model with the associated extraction procedure is ...
Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMIC...
A new method for the determination of a distributed FET noise model is presented. It is based on the...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analyt...
Because of their high performance, Metal-Semiconductor Field Effect Transistors (MESFETs) and High-E...
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device ...
This paper presents an analytical approach to determination of the noise wave model parameters fo...
Theoretical thesis.Bibliography: pages 54-57.1 Introduction -- 2 Modelling noise in FETs -- 3 Noise ...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
Electron device modeling is a challenging task at millimeter frequencies. Conventional approaches ba...
A technology-independent, inherently nonlinear approach is proposed for the compact modelling of hig...
A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identificat...
In this paper we utilize a new approach for a small signal model which is scalable from very small t...
In this paper a small-signal and noise transistor model with the associated extraction procedure is ...
Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMIC...
A new method for the determination of a distributed FET noise model is presented. It is based on the...