Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most likely possibility. The authors also show that the CN is passivated by H and the passivated complex is more stable than MgGa-HValiderad; 2007; 20071010 (evan
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically gr...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of t...
The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically gr...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted a...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) ...
The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the...
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