Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.Validerad; 2000; 20080426 (ysko