Increasing the number of quantum bits while preserving precise control of their quantum electronic properties is a significant challenge in materials design for the development of semiconductor quantum computing devices. Semiconductor heterostructures can host multiple quantum dots that are electrostatically defined by voltages applied to an array of metallic nanoelectrodes. The structural distortion of multiple-quantum-dot devices due to elastic stress associated with the electrodes has been difficult to predict because of the large micrometer-scale overall sizes of the devices, the complex spatial arrangement of the electrodes, and the sensitive dependence of the magnitude and spatial variation of the stress on processing conditions. Sync...
2 páginas, 3 figuras.-- Comunicación oral presentada a la XII International Conference on Molecular ...
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven process due...
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...
Increasing the number of quantum bits while preserving precise control of their quantum electronic p...
© Copyright 2018 American Chemical Society. Quantum devices formed in high-electron-mobility semicon...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many u...
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development o...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
Quantum dots (QDs) are nanometer scale regions that can trap charges. In this dissertation I describ...
We investigated theoretically the distribution of lattice distortion in three dimension around self-...
In a series of recent papers we demonstrated that coupled electro-mechanical effects can lead to pro...
We have studied a GaAs/AlAs periodic quantum dot array (fabricated by electron beam lithography and ...
As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental ef...
A novel peak finding method to map the strain from high resolution transmission electron micrographs...
2 páginas, 3 figuras.-- Comunicación oral presentada a la XII International Conference on Molecular ...
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven process due...
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...
Increasing the number of quantum bits while preserving precise control of their quantum electronic p...
© Copyright 2018 American Chemical Society. Quantum devices formed in high-electron-mobility semicon...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many u...
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development o...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
Quantum dots (QDs) are nanometer scale regions that can trap charges. In this dissertation I describ...
We investigated theoretically the distribution of lattice distortion in three dimension around self-...
In a series of recent papers we demonstrated that coupled electro-mechanical effects can lead to pro...
We have studied a GaAs/AlAs periodic quantum dot array (fabricated by electron beam lithography and ...
As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental ef...
A novel peak finding method to map the strain from high resolution transmission electron micrographs...
2 páginas, 3 figuras.-- Comunicación oral presentada a la XII International Conference on Molecular ...
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven process due...
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...