112 Gb/s PDM-PAM4 Generation and 80 km Transmission Using a Novel Monolithically Integrated Dual-Polarization Electro-Absorption Modulator InP PIC
- Baier, M.
- Soares, F.M.
- Zheng, Z.
- Schmidt-Langhorst, C.
- Elschner, R.
- Frey, F.
- Gruner, M.
- Fischer, J.K.
- Schubert, C.
- Moehrle, M.
- Grote, N.
- Schell, M.
Publication date
January 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2 footprint. The device is used in 112 Gbit/s transmission over 80 km of SSMF
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