Add to ORKGThe effect of copper impurity on radiation-induced defect (RID) reactions in n-type silicon crystals Si upon isothermal annealing at 150 and 200 єC has been studied by means of the Hall effect technique. The activation energies of appropriate reactions are determined and possible mechanisms of copper interaction with RIDs are discussed
The presence of copper contamination is known to severely degrade the minority carrier lifetime of p...
Researches under friction of copper single crystals, the data show that the formation influx in fric...
Influence of cryogenic conditions of deformation on refining the structural Cu components in case of...
The effect of copper impurity on radiation-induced defect (RID) reactions in n-type silicon crystals...
The interaction of copper and irradiation defects in FZ and CZ silicons is studied. The experimental...
The influence of the rare-earth doping on the microhardness of the Cz-silicon and Cz-germanium monoc...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
The possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Dopin...
The transformation of structural defects in high-dose arsenic-implanted, epitaxially grown, relaxed ...
In silicon-based devices copper (Cu) contamination is the cause of a variety of adverse effects, one...
In this report the influence of concentration and temperature of KOH solutions on etching rate of Si...
The processes of silicide and wurtzite-phase formation in Si bombarded by Hf, Ta and W beams with 10...
A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and ...
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon ...
The presence of copper contamination is known to severely degrade the minority carrier lifetime of p...
Researches under friction of copper single crystals, the data show that the formation influx in fric...
Influence of cryogenic conditions of deformation on refining the structural Cu components in case of...
The effect of copper impurity on radiation-induced defect (RID) reactions in n-type silicon crystals...
The interaction of copper and irradiation defects in FZ and CZ silicons is studied. The experimental...
The influence of the rare-earth doping on the microhardness of the Cz-silicon and Cz-germanium monoc...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
The possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Dopin...
The transformation of structural defects in high-dose arsenic-implanted, epitaxially grown, relaxed ...
In silicon-based devices copper (Cu) contamination is the cause of a variety of adverse effects, one...
In this report the influence of concentration and temperature of KOH solutions on etching rate of Si...
The processes of silicide and wurtzite-phase formation in Si bombarded by Hf, Ta and W beams with 10...
A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and ...
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon ...
The presence of copper contamination is known to severely degrade the minority carrier lifetime of p...
Researches under friction of copper single crystals, the data show that the formation influx in fric...
Influence of cryogenic conditions of deformation on refining the structural Cu components in case of...