The nanoscale elastic-plastic response of single crystal 4H-SiC has been investigated by nanoindentationwith a Berkovich tip. The hardness (H) and elastic modulus (E) determined in the load-independent region were 36±2 GPa and 413±8 GPa, respectively. The indentation size effect (ISE) of hardness within an indentation depth of 60 nm was systematically analyzed by the Nix-Gao model. Pop-in events occurring at a depth of ~23 nm with indentation loads of 0.60-0.65 mN were confirmed to indicate the elastic-plastic transition of the crystal, on the basis of the Hertzian contact theory and Johnson's cavity model. Theoritically calculated maximum tensile strength (13.5 GPa) and cleavage strength (33 GPa) also affirms the deformation due to the fir...
There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) f...
The room temperature onset plastic deformation and crack behavior of 3C-SiC under contact load were ...
In order to clarify the plastic deformation mechanism of silicon carbide in cubic phase (3C-SiC), mo...
© 2017The nanoscale elastic-plastic deformation behavior of single crystal 6H-SiC was systematically...
Silicon carbide (SiC) is an important orthopedic material due to its inert nature and superior mecha...
Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in ha...
This research aims at enhancing the fundamental understanding of mechanisms controlling the deformat...
Supplementary information files for 'Nanoscale investigation of deformation characteristics in a pol...
In this paper, we study the mechanical behaviour of silicon carbide at the nanoscale, with a focus o...
Due to the growing implementation and interest in nanoscience and nanotechnology, there has been an ...
Nanoindentation-based fracture toughness measurements of ceramic materials like silicon carbide (SiC...
Specimens of 6H-SiC single crystal were irradiated at room temperature with 2.3 MeV neon ions to thr...
Controllable low-temperature (500 °C) deposition of amorphous a-SiC ceramic films on Si(100) was ach...
International audiencePlastic deformation of a 4H-SiC wafer has been produced by nanoindentation at ...
ABSTRACTSilicon carbide (SiC) is ideally suitable as a sensor material in harsh environments. Despit...
There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) f...
The room temperature onset plastic deformation and crack behavior of 3C-SiC under contact load were ...
In order to clarify the plastic deformation mechanism of silicon carbide in cubic phase (3C-SiC), mo...
© 2017The nanoscale elastic-plastic deformation behavior of single crystal 6H-SiC was systematically...
Silicon carbide (SiC) is an important orthopedic material due to its inert nature and superior mecha...
Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in ha...
This research aims at enhancing the fundamental understanding of mechanisms controlling the deformat...
Supplementary information files for 'Nanoscale investigation of deformation characteristics in a pol...
In this paper, we study the mechanical behaviour of silicon carbide at the nanoscale, with a focus o...
Due to the growing implementation and interest in nanoscience and nanotechnology, there has been an ...
Nanoindentation-based fracture toughness measurements of ceramic materials like silicon carbide (SiC...
Specimens of 6H-SiC single crystal were irradiated at room temperature with 2.3 MeV neon ions to thr...
Controllable low-temperature (500 °C) deposition of amorphous a-SiC ceramic films on Si(100) was ach...
International audiencePlastic deformation of a 4H-SiC wafer has been produced by nanoindentation at ...
ABSTRACTSilicon carbide (SiC) is ideally suitable as a sensor material in harsh environments. Despit...
There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) f...
The room temperature onset plastic deformation and crack behavior of 3C-SiC under contact load were ...
In order to clarify the plastic deformation mechanism of silicon carbide in cubic phase (3C-SiC), mo...