Bandoffsets an Grenzflächen von hochverspannten III-V Halbleitern

The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasability and performance of important electronic devices. In consequence of the progress made in epitaxial techniques, strained pseudomorphic layers are today routine parts of such devices. In the present thesis the question is investigated how the band line-up at a III-V heterojunction is affected when one or both constituents are strained. We have used in situ photoelectron spectroscopy to study the strain dependence of the band offsets at pseudomorphic InAs/GaAs, InAs/AIAs and GaAs/lnP heterojunctions. Heterostructure samples have been prepared by standard molecular beam epitaxy (MBE) or metal organic molecular beam epitaxy (MOMBE). The lattice mismatch amounts up to 7 percent. We emphasize the modifications of the classical core-level method due to the strain. In a short theoretical part we have generalized the most important model theory on band offsets, the interface dipole theory due to Tersoff, to the case of strain. Further chapters treat the influence of doping on the photoemission measurement of band offsets and the Schottky barrier height at clean Au/lnAs contacts