Structural engineering of topological bulk materials is systematically explored with regard to the incorporation of the buckled bismuth layer [Bi], which is a 2D topological insulator per se, into the layered BiTeI host structure. The previously known bismuth telluride iodides, BiTeI and BiTeI, offer physical properties relevant for spintronics. Herewith a new cousin, BiTeI (sp.gr. R3m, a = 440.12(2) pm, c = 3223.1(2) pm), joins the ranks and expands this structural family. BiTeI = [Bi][BiTeI] represents a stack with strictly alternating building blocks. Conditions for reproducible synthesis and crystal-growth of BiTeI and BiTeI are ascertained, thus yielding platelet-like crystals on the millimeter size scale and enabling direct measuremen...
Topological insulators (TIs) gained high interest due to their protected electronic surface states t...
We study the possibility of pressure-induced transitions from a normal semiconductor to a topologica...
We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and top...
Halogen substitution, that is, bromine for iodine, in the series of topological BinTeI (n = 1, 2, 3)...
A honeycomb layer of transition metal-centered bismuth cubes has attracted attention as part of the ...
Recently, it was shown that quantum spin Hall insulator phase with a gap wide enough for practical a...
Bismuth is gaining importance as a key element of functional quantum materials. The effects of spin-...
Commonly, materials are classified as either electrical conductors or insulators. The theoretical di...
Based on first-principles calculations, we predict Bi2TeI, a stoichiometric compound that is synthes...
This thesis was inspired by the discovery of Bi14Rh3I9, the first so-called weak three-dimensional t...
Halogen substitution, that is, bromine for iodine, in the series of topological Bi<sub><i>n</i></sub...
Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. Th...
Two-dimensional (2D) binary XBi compounds, where X belongs to group III elements (B, Al, Ga, and I...
A detailed account of the crystal-growth technique and real structure effects of the first 3D weak t...
The promise of dissipationless transport, protected by time reversal symmetry, made the class of top...
Topological insulators (TIs) gained high interest due to their protected electronic surface states t...
We study the possibility of pressure-induced transitions from a normal semiconductor to a topologica...
We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and top...
Halogen substitution, that is, bromine for iodine, in the series of topological BinTeI (n = 1, 2, 3)...
A honeycomb layer of transition metal-centered bismuth cubes has attracted attention as part of the ...
Recently, it was shown that quantum spin Hall insulator phase with a gap wide enough for practical a...
Bismuth is gaining importance as a key element of functional quantum materials. The effects of spin-...
Commonly, materials are classified as either electrical conductors or insulators. The theoretical di...
Based on first-principles calculations, we predict Bi2TeI, a stoichiometric compound that is synthes...
This thesis was inspired by the discovery of Bi14Rh3I9, the first so-called weak three-dimensional t...
Halogen substitution, that is, bromine for iodine, in the series of topological Bi<sub><i>n</i></sub...
Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. Th...
Two-dimensional (2D) binary XBi compounds, where X belongs to group III elements (B, Al, Ga, and I...
A detailed account of the crystal-growth technique and real structure effects of the first 3D weak t...
The promise of dissipationless transport, protected by time reversal symmetry, made the class of top...
Topological insulators (TIs) gained high interest due to their protected electronic surface states t...
We study the possibility of pressure-induced transitions from a normal semiconductor to a topologica...
We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and top...