Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n Junction

The capability to detect the polarization state of light is crucial in many day‐life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in‐plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization‐sensitive broadband photodetector based on a mixed‐dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization‐sensitive systems such as polarimeters.The authors acknowledge funding from the EU Graphene Flagship (Grant Graphene Core2 785219) and from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement no. 755655, ERC‐StG 2017 project 2D‐TOPSENSE). R.F. acknowledges support from the Netherlands Organisation for Scientific Research (NWO) through the research program Rubicon with project number 680‐50‐1515. D.P.d.L. acknowledges support from the MINECO (program FIS2015‐67367‐C2‐1‐P). Y.N. acknowledges the grant from the China Scholarship Council (File No. 201506120102). W.C.J. acknowledges the Program for the Top Young and Middle‐aged Innovative Talents of Harbin Institute of Technology. MIRE group acknowledges financial support from MINECO‐FEDER (MAT2015‐65203‐R).Peer reviewe