Advancing nanometer technology scaling enables higher integration on a single chip with minimal feature size. As a consequence, the effects of signal and power integrity issues such as crosstalk noise between interconnects, power supply noise and ground bounce in the supply networks significantly increases. Also, reliability issues are eventually introduced by variations in the manufacturing process. These issues will negatively impact the timing characteristics in an integrated circuit (IC), as they give rise to delay defects. Delay-related parametric failures increase the defect escape rate, yield loss and diminish reliability rate. Hence, design-for-test techniques are employed to have a better controllability and observability on the in...
For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require...
Over the course of 60 years, since the invention of the integrated circuit (IC), exponential improve...
[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CM...
In advanced CMOS technologies, microscopic defects localized at the Si interface (Nit) or within the...
The current demand on ubiquitous connectivity imposes stringent requirements on the fabrication of R...
The continuous scaling of transistor dimensions has increased the sensitivity of digital circuits to...
Les contraintes imposées par la roadmap technologique nanométrique imposent aux fabricants de microé...
L'objectif principal de cette thèse est de développer des techniques d'analyse et mitigation capable...
Being able to check whether an IC is functional or not after the manufacturing process is very diffi...
Silicon-on-insulator (SOI) substrates represent the best solution to achieve high performance device...
L'avènement du dispositif à l'échelle nanométrique ou la réduction des circuits intégrés (CI) est de...
Les contraintes économiques actuelles amènent les entreprises d'électronique non seulement à innover...
The advent of nano-scale device or shrinking of integrated circuits (IC) has become a blessing for t...
The first aim of the thesis is to study the feasibility of a new process for nanopatterning of sub-3...
Les progrès de la microélectronique, axés en premier lieu sur l’amélioration des performances et la ...
For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require...
Over the course of 60 years, since the invention of the integrated circuit (IC), exponential improve...
[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CM...
In advanced CMOS technologies, microscopic defects localized at the Si interface (Nit) or within the...
The current demand on ubiquitous connectivity imposes stringent requirements on the fabrication of R...
The continuous scaling of transistor dimensions has increased the sensitivity of digital circuits to...
Les contraintes imposées par la roadmap technologique nanométrique imposent aux fabricants de microé...
L'objectif principal de cette thèse est de développer des techniques d'analyse et mitigation capable...
Being able to check whether an IC is functional or not after the manufacturing process is very diffi...
Silicon-on-insulator (SOI) substrates represent the best solution to achieve high performance device...
L'avènement du dispositif à l'échelle nanométrique ou la réduction des circuits intégrés (CI) est de...
Les contraintes économiques actuelles amènent les entreprises d'électronique non seulement à innover...
The advent of nano-scale device or shrinking of integrated circuits (IC) has become a blessing for t...
The first aim of the thesis is to study the feasibility of a new process for nanopatterning of sub-3...
Les progrès de la microélectronique, axés en premier lieu sur l’amélioration des performances et la ...
For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require...
Over the course of 60 years, since the invention of the integrated circuit (IC), exponential improve...
[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CM...