A technique to measure a terahertz wave generated by spectrum tailored Fabry-Pérot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced wi...
\u3cp\u3eMultimode semiconductor lasers under certain DC bias conditions generate electromagnetic wa...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced w...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is as...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a F...
A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced wi...
\u3cp\u3eMultimode semiconductor lasers under certain DC bias conditions generate electromagnetic wa...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from ...
A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced w...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A...