Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil:Building blocks for radio frequency identification application

\u3cp\u3eIn this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm\u3csup\u3e2\u3c/sup\u3e /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.\u3c/p\u3